http://iet.metastore.ingenta.com
1887

10–13.6 Gbit/s 0.18 µm CMOS modulator drivers with 8 VPP differential output swing

10–13.6 Gbit/s 0.18 µm CMOS modulator drivers with 8 VPP differential output swing

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A novel intrinsic drain-gate capacitance (CDG) feedback network is incorporated into the conventional cascode circuit configuration to implement a 10–13.6 Gbit/s modulator driver. The driver fabricated in 0.18 µm CMOS process could generate an 8 VPP differential output swing. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than the currently reported CMOS drivers.

References

    1. 1)
      • Li, D.-U., Huang, L.-R., Tsai, C.-M.: `Low power consumption 10-Gb/s SiGe modulator drivers with 9V', IEEE RFIC Symp. Dig. Pprs, 2005, Long Beach, CA, USA, accepted for publication.
    2. 2)
    3. 3)
    4. 4)
    5. 5)
      • Mandegaran, S., Hajimiri, A.: `A breakdown voltage doubler for high voltage swing drivers', IEEE CICC Dig. Pprs, 2004, p. 103–106.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20051001
Loading

Related content

content/journals/10.1049/el_20051001
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address