Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates
Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates
- Author(s): M. Hugues ; B. Damilano ; J. Barjon ; J.-Y. Duboz ; J. Massies ; J.-M. Ulloa ; M. Montes ; A. Hierro
- DOI: 10.1049/el:20050487
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- Author(s): M. Hugues 1 ; B. Damilano 1 ; J. Barjon 1 ; J.-Y. Duboz 1 ; J. Massies 1 ; J.-M. Ulloa 2 ; M. Montes 2 ; A. Hierro 2
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View affiliations
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Affiliations:
1: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Sophia Antipolis, France
2: Centre National de la Recherche Scientifique, ISOM—Universidad Politécnica de Madrid, Ciudad Universitaria s/n, Madrid, Spain
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Affiliations:
1: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Sophia Antipolis, France
- Source:
Volume 41, Issue 10,
12 May 2005,
p.
595 – 596
DOI: 10.1049/el:20050487 , Print ISSN 0013-5194, Online ISSN 1350-911X
(Ga,In)(N,As)/GaAs single quantum well lasers have been grown by molecular beam epitaxy. Room temperature pulsed operation at a wavelength of 1515 nm is achieved. As-cleaved 1000 µm-long lasers have a threshold current density of 4.06 kA/cm2 and a slope efficiency of 0.075 W/A per facet.
Inspec keywords: quantum well lasers; current density; molecular beam epitaxial growth; gallium compounds; III-V semiconductors; indium compounds
Other keywords:
Subjects: Vacuum deposition; Semiconductor lasers; Vacuum deposition; Thin film growth, structure, and epitaxy; Design of specific laser systems; Lasing action in semiconductors
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