Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells
The InP/InGaAsP double heterojunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample.