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Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells

Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells

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The InP/InGaAsP double heterojunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample.

References

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