Room-temperature (300 K) intersubband electroluminescence has been obtained from a quantum cascade structure adopting triple-well vertical-transition active regions, based on Ga0.47In0.53As/AlAs0.56Sb0.44 heterostructures grown lattice-matched on InP substrate by molecular beam epitaxy. The emission peak wavelength varies from 4.3 µm at 77 K to 4.5 µm at 300 K.
Inspec keywords: indium compounds; quantum cascade lasers; electroluminescence; III-V semiconductors; gallium arsenide; semiconductor epitaxial layers; aluminium compounds
Other keywords:
Ga0.47In0.53As-AlAs0.56Sb0.44;
Subjects: Semiconductor lasers; Electroluminescence (condensed matter); Lasing action in semiconductors
References
-
-
1)
- C. Becker , I. Prevot , X. Marcadet , B. Vinter , C. Sirtori . InAs/AlSb quantum-cascade light-emitting devices in the 3–5 µm wavelength region. Appl. Phys. Lett. , 1209 - 1211
-
2)
- N. Georgiev , T. Mozume . Photoluminescence study of InGaAs/AlAsSb heterostructure. J. Appl. Phys. , 1064 - 1069
-
3)
- J. Faist , F. Capasso , D.L. Sivco , C. Sirtori , A.L. Hutchinson , A.Y. Cho . Science. Science , 553 - 556
-
4)
- R. Teissier , D. Barate , A. Vicet , C. Alibert , A.N. Baranov , X. Marcadet , C. Renard , M. Garcia , C. Sirtori , D. Revin , J. Cockburn . Room temperature operation of InAs/AlSb quantum cascade lasers. Appl. Phys. Lett. , 167 - 170
-
5)
- Q.K. Yang , A.Z. Li . Calculation of spontaneous emission and gain spectra for quantum cascade lasers. J. Phys.: Condens. Matter , 1907 - 1914
-
6)
- D.G. Revin , L.R. Wilson , E.A. Zibik , R.P. Green , J.W. Cockburn , M.J. Steer , R.J. Airey , M. Hopkinson . λ∼4–5.3 µm intersubband emission from InGaAs-AlAsSb quantum cascade structures. Appl. Phys. Lett. , 1447 - 1449
-
7)
- J. Faist , F. Capasso , C. Sirtori , D.L. Sivco , A.Y. Cho . Quantum cascade lasers. Semicond. Semimet. , 1 - 83
-
8)
- J. Faist , F. Capasso , D.L. Sivco , A.L. Hutchinson , G. Chu Sung-Nee , A.Y. Cho . Short wavelength (λ ∼ 3.4 µm) quantum cascade laser based on strained compensated InGaAs/AlInAs. Appl. Phys. Lett. , 680 - 682
-
9)
- D.G. Revin , M.J. Steer , L.R. Wilson , R.J. Airey , J.W. Cockburn , E.A. Zibik , R.P. Green . InGaAs-AlAsSb quantum cascade structures emitting at 3.1 µm. Electron. Lett. , 874 - 875
-
1)
Related content