Electrical isolation of InP and InGaAs using iron and krypton

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Electrical isolation of InP and InGaAs using iron and krypton

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Both n-type InP and InGaAs layers are electrically isolated using iron and krypton ion implantation at 77K to create thermally-stable highly resistive regions. The data suggests that, in both InP and InGaAs, chemical induced compensation operates above a post-implant annealing temperature of 500°C for iron implant isolation. However, in the case of krypton, damage induced isolation is the only compensation mechanism responsible for electrical isolation in both materials. The isolation scheme used looks promising to III–V semiconductor industries since such high sheet resistance values (∼107 Ω/sq) with a broad thermally-stable window are obtained for both n-type InP and InGaAs materials.

Inspec keywords: iron; gallium arsenide; electric resistance; indium compounds; ion implantation; annealing; carrier density; semiconductor thin films; III-V semiconductors; thermal stability; krypton

Other keywords: InP:Fe; sheet resistance; InP layers; krypton ion implantation; InP:Kr; damage induced isolation; thermally stable; III-V semiconductor industries; 77 K; iron ion implantation; implant annealing temperature; InGaAs layers; electrical isolation; resistive regions

Subjects: Semiconductor doping; Doping and implantation of impurities; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Annealing processes in semiconductor technology; Thin film growth, structure, and epitaxy; Annealing processes; Low-field transport and mobility; piezoresistance (semiconductors/insulators); II-VI and III-V semiconductors

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