What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 µm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.
Inspec keywords: diamond; surface emitting lasers; elemental semiconductors; indium compounds; gallium compounds; III-V semiconductors; gallium arsenide; laser mirrors; wide band gap semiconductors; microchip lasers
Other keywords:
Subjects: Laser resonators and cavities; Lasing action in other solids; Laser accessories and instrumentation; Solid lasers; Lasing action in semiconductors; Semiconductor lasers; Laser resonators and cavities; Optical lenses and mirrors
References
-
-
1)
- S.-H. Park , J. Kim , H. Jeon , T. Sakong , S.-N. Lee , S. Chae , Y. Park , C.-H. Jeong , G.-Y. Yeom , Y.-N. Cho . Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme. Appl. Phys. Lett. , 2121 - 2123
-
2)
- M.A. Holm , D. Burns , A.I. Ferguson , M.D. Dawson . Actively stabilized single-frequency vertical-external-cavity AlGaAs laser. IEEE Photonics Technol. Lett. , 1551 - 1553
-
3)
- J.-M. Hopkins , S.A. Smith , C.W. Jeon , H.D. Sun , D. Burns , S. Calvez , M.D. Dawson , T. Jouhti , M. Pessa . A 0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm. Electron. Lett. , 30 - 31
-
4)
- Riechert, H., Geelhaar, L., Ebbinghaus, G., Lima, A., Ramakrishnan, A., Steinle, G.: `1.3 µm VCSELs for fiber-optical communication systems', PLE2, Indium Phosphide and Related Materials (IPRM), 2003, Santa Barbara, CA, USA.
-
5)
- T.D. Raymond , W.J. Alford , M.H. Crawford , A.A. Allerman . Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser. Opt. Lett. , 1127 - 1129
-
6)
- J.E. Hastie , J.-M. Hopkins , C.W. Jeon , S. Calvez , D. Burns , M.D. Dawson , R. Abram , E. Riis , A.I. Ferguson , W.J. Alford , T.D. Raymond , A.A. Allerman . Microchip vertical external cavity surface emitting lasers. Electron. Lett. , 1324 - 1325
-
7)
- A. Garnache , S. Hoogland , A.C. Tropper , I. Sagnes , G. Saint-Girons , J.S. Roberts . Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power. Appl. Phys. Lett. , 3892 - 3894
-
8)
- J.J. Zayhowski , G. Dube , H.P. Jenssen . (1990) Thermal Guiding in Microchip Lasers, O. S. A. Proceedings on Advanced Solid State Lasers.
-
9)
- R. Haring , R. Paschotta , A. Aschwanden , E. Gini , F. Morier-Genoud , U. Keller . High-power passively mode-locked semiconductor lasers. IEEE J. Quantum Electron. , 1268 - 1275
-
1)
Related content