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Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315 nm

Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315 nm

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What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 µm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

References

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      • Riechert, H., Geelhaar, L., Ebbinghaus, G., Lima, A., Ramakrishnan, A., Steinle, G.: `1.3 µm VCSELs for fiber-optical communication systems', PLE2, Indium Phosphide and Related Materials (IPRM), 2003, Santa Barbara, CA, USA.
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      • T.D. Raymond , W.J. Alford , M.H. Crawford , A.A. Allerman . Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser. Opt. Lett. , 1127 - 1129
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      • J.J. Zayhowski , G. Dube , H.P. Jenssen . (1990) Thermal Guiding in Microchip Lasers, O. S. A. Proceedings on Advanced Solid State Lasers.
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