Your browser does not support JavaScript!

GaAs passivation by low-frequency plasma-enhanced chemical vapour deposition of silicon nitride

GaAs passivation by low-frequency plasma-enhanced chemical vapour deposition of silicon nitride

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Passivation of GaAs by silicon nitride (SixNy) deposition using low-frequency PECVD (LF PECVD) is presented. The high amount of hydrogen implantation during this process enhances the passivation effect, demonstrating for the first time the unpinning of the Fermi level by a simple deposition of SixNy on a deoxidised GaAs surface. The (NH4)2S/SixNy passivation is also simplified, and MIS capacitors are fabricated by a novel process, which consists in exposing the GaAs surface directly to sulphur solution, without the usual deoxidation etching step, followed by the deposition of LF PECVD SixNy. Good modulation of the surface potential is observed, and the interface state density (Dit) as measured from 1 MHz CV characteristics has a minimum of 3×1011 cm−2 eV−1.


    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
      • A. Jaouad . Fabrication of (NH4)2S passivated GaAs MIS devices using low-frequency plasma-enhanced chemical vapor deposition. J. Vac. Sci. Technol. A , 3
    7. 7)

Related content

This is a required field
Please enter a valid email address