IMPATT oscillation in SiC p+-n−-n+ diodes with a guard ring formed by vanadium ion implantation
SiC impact avalanche and transit time (IMPATT) diodes with a guard ring formed by vanadium ion implantation showed a peak output power of 1.8 W at 11.93 GHz. The guard ring reduced the electric field near the diode's periphery and reduced the device temperature.