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SiC impact avalanche and transit time (IMPATT) diodes with a guard ring formed by vanadium ion implantation showed a peak output power of 1.8 W at 11.93 GHz. The guard ring reduced the electric field near the diode's periphery and reduced the device temperature.
Inspec keywords: ion implantation; IMPATT oscillators; wide band gap semiconductors; silicon compounds; circuit oscillations; microwave oscillators; vanadium
Other keywords:
Subjects: Junction and barrier diodes; Semiconductor doping; Solid-state microwave circuits and devices; Oscillators