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IMPATT oscillation in SiC p+-n-n+ diodes with a guard ring formed by vanadium ion implantation

IMPATT oscillation in SiC p+-n-n+ diodes with a guard ring formed by vanadium ion implantation

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SiC impact avalanche and transit time (IMPATT) diodes with a guard ring formed by vanadium ion implantation showed a peak output power of 1.8 W at 11.93 GHz. The guard ring reduced the electric field near the diode's periphery and reduced the device temperature.

References

    1. 1)
      • S.M. Sze . (1981) Physics of semiconductor devices.
    2. 2)
      • L. Yuan , J.A. Cooper , R. Melloch , K. Webb . Experimental demonstration of a silicon carbide IMPATT oscillator. IEEE Electron Device Lett. , 6 , 266 - 268
    3. 3)
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