AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz

AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz

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The first 10 GHz power performance of AlGaN/GaN HEMTs on silicon substrate is reported. Molecular beam epitaxy grown AlGaN/GaN heterostructure and field-plate gates with 0.3 µm length are employed to fabricate the devices on 2-inch Si (111) substrates. A maximum current density of 850 mA/mm and an extrinsic transconductance of 220 mS/mm are achieved. Load pull measurements at 10 GHz demonstrate a continuous-wave output power density of 7 W/mm, which is the highest power density reported to date for an Si-based transistor. A peak power added efficiency of 52% is achieved for these devices at 10 GHz.


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      • A.T. Schremer , J.A. Smart , Y. Wang , O. Ambacher , N.C. Macdonald , J.R. Shealy . High electron mobility AlGaN/GaN heterostructure on (111) Si. Applied Phys. Lett. , 736 - 738
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