High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates
High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates
- Author(s): K. Shiojima ; T. Makimura ; T. Kosugi ; S. Sugitani ; N. Shigekawa ; H. Ishikawa ; T. Egawa
- DOI: 10.1049/el:20040512
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- Author(s): K. Shiojima 1 ; T. Makimura 1 ; T. Kosugi 1 ; S. Sugitani 1 ; N. Shigekawa 1 ; H. Ishikawa 2 ; T. Egawa 2
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View affiliations
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Affiliations:
1: NTT Photonics Laboratories, Atsugi-shi, Japan
2: Research Center for Nano-Devices and System, Nagoya Institute of Technology, Showa-ku, Japan
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Affiliations:
1: NTT Photonics Laboratories, Atsugi-shi, Japan
- Source:
Volume 40, Issue 12,
10 June 2004,
p.
775 – 776
DOI: 10.1049/el:20040512 , Print ISSN 0013-5194, Online ISSN 1350-911X
The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7×300 µm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.
Inspec keywords: power integrated circuits; field effect MMIC; high electron mobility transistors; gallium compounds; UHF mixers; III-V semiconductors; MMIC mixers; UHF integrated circuits; aluminium compounds; silicon compounds; wide band gap semiconductors
Other keywords:
Subjects: Power integrated circuits; Microwave integrated circuits; Modulators, demodulators, discriminators and mixers; Other field effect devices; Other field effect integrated circuits; Power semiconductor devices
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