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High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

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The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7×300 µm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

References

    1. 1)
    2. 2)
      • K. Shiojima , N. Shigekawa . Thermal stability of sheet resistance in AlGaN/GaN 2DEG structure. Phys. Status Solidi C , 1 , 397 - 400
    3. 3)
      • Joshin, K., Kikkawa, T., Hayashi, H., Maniwa, T., Yokokawa, S., Yokoyama, M., Adachi, N., Takikawa, M.: `A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications', IEEE Int. Electron Devices Mtg. Tech. Dig., 2003, Washington, DC, USA, p. 983–985.
    4. 4)
      • Wu, Y.-F., Chavarkar, P.M., Moore, M., Parikh, P., Mishra, U.K.: `Bias-dependent performance of high-power AlGaN/GaN HEMTs', IEEE Int. Electron Devices Mtg. Tech. Dig., 2001, Washington, DC, USA, p. 378–380.
    5. 5)
    6. 6)
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