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Behaviour of logic gates fabricated on Si/SiGe MODFET technology

Behaviour of logic gates fabricated on Si/SiGe MODFET technology

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The behaviour of two fabricated logic gates using n-type Si/SiGe MODFETs is reported. S-parameter measurements show that the voltage separation between states at 20 GHz is 15 dB for the NAND gate and 8 dB for the NOR gate. The measured DC levels of the outputs allow the possibility of cascading the gates for use in more complex circuits.


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      • F. Aniel , M. Enciso-Aguilar , N. Zerounian , P. Crozat , R. Adde , T. Hackbarth , H. Herzog , U. Konig . High speed Si/SiGe and Ge/SiGe MODFETs. Top. Mtg on Silicon Monolithic Integrated Circuits in RF Systems, Dig. Pap , 29 - 32
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      • Kallfass, I., Schumacher, H., Zeuner, M., König, U., Brazil, T.J.: `A model for SiGe MODFETs with improved large-signal quality and frequency range', Proc. 32nd European Microwave Conf., September 2002, Milan, Italy, I, p. 89–91.

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