Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Behaviour of logic gates fabricated on Si/SiGe MODFET technology

Behaviour of logic gates fabricated on Si/SiGe MODFET technology

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The behaviour of two fabricated logic gates using n-type Si/SiGe MODFETs is reported. S-parameter measurements show that the voltage separation between states at 20 GHz is 15 dB for the NAND gate and 8 dB for the NOR gate. The measured DC levels of the outputs allow the possibility of cascading the gates for use in more complex circuits.

References

    1. 1)
    2. 2)
      • F. Aniel , M. Enciso-Aguilar , N. Zerounian , P. Crozat , R. Adde , T. Hackbarth , H. Herzog , U. Konig . High speed Si/SiGe and Ge/SiGe MODFETs. Top. Mtg on Silicon Monolithic Integrated Circuits in RF Systems, Dig. Pap , 29 - 32
    3. 3)
    4. 4)
      • Kallfass, I., Schumacher, H., Zeuner, M., König, U., Brazil, T.J.: `A model for SiGe MODFETs with improved large-signal quality and frequency range', Proc. 32nd European Microwave Conf., September 2002, Milan, Italy, I, p. 89–91.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20040494
Loading

Related content

content/journals/10.1049/el_20040494
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address