Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

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Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

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Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm−2 in 〈100〉 silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.

Inspec keywords: elemental semiconductors; electron mobility; p-n junctions; secondary ion mass spectra; electron density; doping profiles; antimony; Hall mobility; silicon

Other keywords: carrier profiles; mobility profiles; Si:Sb; nanometer size resolution; Hall effect measurements; Sb implanted silicon; atomic profiles; ultra shallow junctions; secondary ion mass spectroscopy; electron concentration

Subjects: Semiconductor junctions; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Mass spectrometry (chemical analysis); Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Semiconductor doping; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electrical properties of elemental semiconductors (thin films, low-dimensional and nanoscale structures); Impurity concentration, distribution, and gradients; Elemental semiconductors

References

    1. 1)
      • T. Alzanki , R. Gwilliam , N. Emerson , B.J. Sealy . Low temperature processing of antimony implanted silicon. J. Electron. Mater.
    2. 2)
      • Collart, E.J.H., Kirkwood, D., Vandervorst, W., Brijs, B., Van den Berg, J.A., Werner, M., Noakes, T.C.Q.: `Characterisation of low energy antimony (2–5 keV) implantation into silicon', Proc. IEEE Int. Conf. on Ion Implantation Technology, 2003, Taos, NM, USA, p. 147–150.
    3. 3)
      • T. Alzanki , R. Gwilliam , N. Emerson , Z. Tabatabaian , C. Jeynes , B.J. Sealy . Concentration profiles of antimony-doped shallow layers in silicon. Semicond. Sci. Technol.
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