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Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm−2 in 〈100〉 silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.
Inspec keywords: elemental semiconductors; electron mobility; p-n junctions; secondary ion mass spectra; electron density; doping profiles; antimony; Hall mobility; silicon
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Subjects: Semiconductor junctions; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Mass spectrometry (chemical analysis); Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Semiconductor doping; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electrical properties of elemental semiconductors (thin films, low-dimensional and nanoscale structures); Impurity concentration, distribution, and gradients; Elemental semiconductors