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Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

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Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm−2 in 〈100〉 silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.


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      • T. Alzanki , R. Gwilliam , N. Emerson , Z. Tabatabaian , C. Jeynes , B.J. Sealy . Concentration profiles of antimony-doped shallow layers in silicon. Semicond. Sci. Technol.

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