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Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

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Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm−2 in 〈100〉 silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.

References

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      • T. Alzanki , R. Gwilliam , N. Emerson , Z. Tabatabaian , C. Jeynes , B.J. Sealy . Concentration profiles of antimony-doped shallow layers in silicon. Semicond. Sci. Technol.
    2. 2)
      • T. Alzanki , R. Gwilliam , N. Emerson , B.J. Sealy . Low temperature processing of antimony implanted silicon. J. Electron. Mater.
    3. 3)
      • Collart, E.J.H., Kirkwood, D., Vandervorst, W., Brijs, B., Van den Berg, J.A., Werner, M., Noakes, T.C.Q.: `Characterisation of low energy antimony (2–5 keV) implantation into silicon', Proc. IEEE Int. Conf. on Ion Implantation Technology, 2003, Taos, NM, USA, p. 147–150.
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