Dependence of AlGaN-based SAW oscillator frequency on temperature
Dependence of AlGaN-based SAW oscillator frequency on temperature
- Author(s): R. Rimeika ; A. Sereika ; P. Kaz̆dailis ; Q. Fareed ; R. Gaska ; D. Ciplys ; M.S. Shur
- DOI: 10.1049/el:20040394
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- Author(s): R. Rimeika 1 ; A. Sereika 1 ; P. Kaz̆dailis 1 ; Q. Fareed 2 ; R. Gaska 2 ; D. Ciplys 3 ; M.S. Shur 3
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View affiliations
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Affiliations:
1: Department of Radiophysics, Vilnius University, Vilnius, Lithuania
2: Department of Radiophysics, Sensor Electronic Technology, Inc., Columbia, USA
3: Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, USA
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Affiliations:
1: Department of Radiophysics, Vilnius University, Vilnius, Lithuania
- Source:
Volume 40, Issue 10,
13 May 2004,
p.
637 – 638
DOI: 10.1049/el:20040394 , Print ISSN 0013-5194, Online ISSN 1350-911X
A SAW delay-line oscillator based on an AlxGa1−xN-on-sapphire structure is presented, and its frequency dependence on temperature has been measured. The temperature coefficient of frequency −69 ppm/K has been found for the AlxGa1−xN layer thickness 1.7 µm, Al molar amount x=0.5, and operation frequency 226 MHz.
Inspec keywords: surface acoustic wave oscillators; aluminium compounds; surface acoustic wave delay lines; gallium compounds; III-V semiconductors
Other keywords:
Subjects: Acoustic wave devices
References
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1)
- D. Ciplys , R. Rimeika , A. Sereika , R. Gaska , M.S. Shur , J.W. Yang , M.A. Khan . GaN-based SAW delay-line oscillator. Electron. Lett. , 8 , 545 - 546
-
2)
- C. Deger , E. Born , H. Angerer , O. Ambacher , M. Stutzmann , J. Hornsteiner , E. Riha , G. Fischerauer . Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements. Appl. Phys. Lett. , 2400 - 2402
-
3)
- H.H. Jeong , S.K. Kim , Y.C. Jung , H.C. Choi , J.H. Lee , Y.H. Lee . Characteristic analysis of SAW filters fabricated using GaN thin films. Phys. Status Solidi A , 247 - 250
-
4)
- D. Ciplys , R. Rimeika , M.S. Shur , S. Rumyantsev , R. Gaska , A. Sereika , J. Yang , M.A. Khan . Visible-blind photoresponse of GaN-based surface acoustic wave oscillator. Appl.Phys. Lett. , 2020 - 2022
-
5)
- W.M. Yim , R.J. Paff . Thermal expansion of AlN, sapphire, and silicon. J. Appl. Phys. , 1456 - 1457
-
6)
- S. Camou , T.H. Pastureaud , H.P.D. Schenk , S. Ballandras , V. Laude . Guided elastic waves in GaN-on-sapphire. Electron. Lett. , 1053 - 1054
-
7)
- G. Bu , D. Ciplys , M. Shur , L.J. Schowalter , S. Schujman , R. Gaska . Temperature coefficient of SAW frequency in single crystal bulk AlN. Electron. Lett. , 755 - 757
-
8)
- J.D. Maines , E.G.S. Paige , A.F. Saunders , A.S. Young . Simple technique for the accurate determination of delay-time variations in acoustic-surface-wave structures. Electron. Lett. , 678 - 680
-
9)
- D. Ciplys , R. Rimeika , M.S. Shur , R. Gaska , A. Sereika , J. Yang , M. Asif Khan . Radio-frequency response of GaN-based SAW oscillator to UV illumination by the Sun and man-made source. Electron. Lett. , 134 - 135
-
1)
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