Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

References

    1. 1)
      • N.K. Dutta . Strain compensated InGaAs-GaAsP-InGaP laser. IEEE Photonics Tech. Lett. , 852 - 854
    2. 2)
    3. 3)
      • S. Fathpour . Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers. Electron. Lett. , 20 , 1443 - 1445
    4. 4)
      • D. O'Brien . Feedback sensitivity of 1.3 micron InAs/GaAs quantum dot lasers. Electron. Lett. , 25 , 1819 - 1820
    5. 5)
      • M. Kircherer . Data transmission using GaAs-based InAs-InGaAs quantum dot LEDs emitting at 1.3 µm wavelength. Electron. Lett.
    6. 6)
    7. 7)
      • L.A. Coldren , S.W. Corzine . (1995) Diode lasers and photonic integrated circuits.
    8. 8)
    9. 9)
    10. 10)
    11. 11)
      • H. Zhang . High external feedback resistance of laterally loss coupled distributed feedback quantum dot semiconductor lasers. IEEE Phononics Technol. Lett. , 11
    12. 12)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20040270
Loading

Related content

content/journals/10.1049/el_20040270
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address