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Analytical cascode model of buried-gate SiC MESFETs

Analytical cascode model of buried-gate SiC MESFETs

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A cascode model is proposed to analyse current-voltage and cutoff frequency characteristics of the buried-gate device. A high saturation current of the buried-gate device is associated with the short channel FET representing the buried region. Two unsaturated side FETs result in a relatively lower cutoff frequency of the buried-gate device compared to the gate-recessed one.

Inspec keywords: silicon compounds; wide band gap semiconductors; Schottky gate field effect transistors; semiconductor device models

Other keywords: buried-gate SiC MESFETs; cascode model; short channel FET; SiC; cutoff frequency properties

Subjects: Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing

References

    1. 1)
      • R. Darling . Distributed numerical modeling of dual-gate GaAs MESFET's. IEEE Trans. Electron Devices , 9 , 1351 - 1360
    2. 2)
    3. 3)
      • T. Furutsuka , M. Ogawa , N. Kawamura . GaAs dual-gate MESFET's. IEEE Trans. Electron Devices , 6 , 580 - 586
    4. 4)
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