The fabrication and characterisation of a 4H-SiC double-gated, normally-off vertical junction field-effect transistor (VJFET) without epitaxial regrowth, with an implanted vertical channel, is reported. A blocking voltage of 1530 V in the normally-off mode has been achieved with a drift layer of 15 µm using a two-step junction termination extension. The VJFET shows a low specific on-resistance RON_SP of 16.8 mΩ · cm2.
References
-
-
1)
-
J.H. Zhao ,
P. Alexandrov ,
L. Fursin ,
M. Weiner
.
Demonstration of first 1050 V, 21.7 mΩ cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel.
Electron. Lett.
,
1 ,
151 -
152
-
2)
-
H. Onose ,
A. Watanabe ,
T. Someya ,
Y. Kobayashi
.
2 kV 4H-SiC junction FETs.
Mater. Sci. Forum
,
1227 -
1230
-
3)
-
X. Li ,
K. Tone ,
L.H. Cao ,
P. Alexandrov ,
L. Fursin ,
J.H. Zhao
.
Theoretical and experimental study of 4H-SiC junction edge termination.
Mater. Sci. Forum
-
4)
-
P. Friedrichs ,
H. Mitlehner ,
R. Schörner ,
K.-O. Dohnke ,
R. Elpelt ,
D. Stephani
.
Application-oriented unipolar switching SiC devices.
Mater. Sci. Forum
,
1185 -
1190
-
5)
-
Zhao, J.H., Xie, K., Lorenzo, G., Buchwald, W., Flemish, J., Burke, T., Singh, H.: `SiC UMOS and thyristor-based power switches', Proc. Workshop on High Temperature Power Electronics for Vehicle, 1995, p. 36–43.
-
6)
-
J.A. Cooper ,
M.R. Melloch ,
R. Singh ,
A. Agarwal ,
J.W. Palmour
.
Status and prospects for SiC power MOSFETs.
IEEE Trans. Electron Devices
,
4 ,
658 -
663
-
7)
-
S. Yoshida ,
S. Nishino ,
H. Harima ,
T. Kimoto
.
(2002)
, Mater. Sci. Forum.
-
8)
-
J.H. Zhao ,
K. Tone ,
P. Alexandrov ,
L. Fursin ,
M. Weiner
.
1710-V, 2.77-mΩcm2 4H-SiC trenched and implanted vertical junction field-effect transistors.
IEEE Electron Device Lett.
,
2 ,
81 -
83
-
9)
-
Asano, K., Sugawara, Y., Hayashi, T., Ryu, S., Singh, R., Palmour, J., Takayama, D.: `5-kV 4H-SiC SEJFET with low R', Proc. ISPSD, 2002, p. 61–64.
-
10)
-
R.N. Gupta ,
H.R. Chang ,
E. Hanna ,
C. Bui
.
A 600 V SiC trench JFET.
Mater. Sci. Forum
,
1219 -
1222
-
11)
-
J.H. Zhao ,
K. Tone ,
J. Zhang ,
P. Alexandrov ,
L. Fursin ,
M. Weiner
.
Demonstration of a high performance 4H-SiC vertical junction field effect transistor without epitaxial regrowth.
Electron. Lett.
,
3 ,
321 -
323
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20040165
Related content
content/journals/10.1049/el_20040165
pub_keyword,iet_inspecKeyword,pub_concept
6
6