Device characteristics of Si PMOSFETs with decaborane (B10H14) or elemental B extension implants
Device characteristics of Si PMOSFETs with decaborane (B10H14) or elemental B extension implants
- Author(s): H.-J.L. Gossmann ; A. Agarwal ; A.S. Perel
- DOI: 10.1049/el:20040080
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- Author(s): H.-J.L. Gossmann 1 ; A. Agarwal 1 ; A.S. Perel 1
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View affiliations
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Affiliations:
1: Axcelis Technologies, Beverly, USA
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Affiliations:
1: Axcelis Technologies, Beverly, USA
- Source:
Volume 40, Issue 2,
22 January 2004,
p.
147 – 148
DOI: 10.1049/el:20040080 , Print ISSN 0013-5194, Online ISSN 1350-911X
PMOS transistors with coded gate-lengths down to 100 nm have been fabricated using either 5.6 keV 2×1013 cm−2 decaborane (B10H14) or 0.5 keV 2×1014 cm−2 elemental B for the extension implant. DC device characteristics are essentially identical between the two implant processes, indicating that decaborane is a viable alternative to elemental B in this area.
Inspec keywords: MOSFET; ion implantation; boron; semiconductor device measurement; doping profiles; boron compounds
Other keywords:
Subjects: Insulated gate field effect transistors; Semiconductor doping
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