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Device characteristics of Si PMOSFETs with decaborane (B10H14) or elemental B extension implants

Device characteristics of Si PMOSFETs with decaborane (B10H14) or elemental B extension implants

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PMOS transistors with coded gate-lengths down to 100 nm have been fabricated using either 5.6 keV 2×1013 cm−2 decaborane (B10H14) or 0.5 keV 2×1014 cm−2 elemental B for the extension implant. DC device characteristics are essentially identical between the two implant processes, indicating that decaborane is a viable alternative to elemental B in this area.

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