Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface

Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The authors investigate the effect of the thermal boundary resistance between the GaN layer and the substrate on the current–voltage characteristics of GaN MESFETs. Using material specific models for carrier drift-diffusion and thermal conductivity the authors determine the dependence of the breakdown voltage on thermal boundary resistance. The mechanism of the thermal breakdown in GaN transistors is also discussed. Obtained results can be used for structure optimisation of GaN-based transistors.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
      • K. Filippov , A.A. Balandin . The effect of the thermal boundary resistance on self-heating of AlGaN/GaN HFETs. MRS Internet J. Nitride Semicond. Res.
    8. 8)
      • S. Rumyantsev . Low 1/f noise in AlGaN/GaN HFETs on SiC substrates. Phys. Status Solids A , 201 - 204
    9. 9)
    10. 10)
    11. 11)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20040071
Loading

Related content

content/journals/10.1049/el_20040071
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address