A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p+-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n+-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm2 and a current peak-to-valley ratio of 2.6 at room temperature.
References
-
-
1)
-
S.L. Rommel
.
Epitaxially grown Si resonant interband tunnel diodes exhibiting high current density.
IEEE Electron Device Lett.
,
7 ,
329 -
331
-
2)
-
J. Wang
.
Silicon tunnel diodes formed by proximity rapid thermal diffusion.
IEEE Electron Device Lett.
,
2 ,
93 -
95
-
3)
-
A.F.W. Willoughby ,
J.M. Bonar ,
A.D.N. Paine
.
Diffusion mechanisms in SiGe alloys.
Mater. Res. Soc. Symp. Proc.
,
253 -
264
-
4)
-
W. Zagozdzon-Wosik ,
P. Grabiec ,
G. Lux
.
Fabrication of sub-micron junctions-proximity rapid thermal diffusion of phosphorus, boron and arsenic.
IEEE Trans. Electron Devices
,
12 ,
2281 -
2290
-
5)
-
R. Duschl ,
O.G. Schmidt ,
K. Eberl
.
Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio.
Appl. Phys. Lett.
,
7 ,
879 -
881
-
6)
-
J.-S. Rieh
.
SiGe HBTs with cut-off frequency of 350 GHz.
IEDM Tech. Dig.
,
771 -
774
-
7)
-
S.J. Koester ,
J.O. Chu ,
R.A. Groves
.
High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD.
Electron. Lett.
,
1 ,
86 -
87
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20040048
Related content
content/journals/10.1049/el_20040048
pub_keyword,iet_inspecKeyword,pub_concept
6
6