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SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

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A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p+-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n+-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm2 and a current peak-to-valley ratio of 2.6 at room temperature.

References

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      • J.-S. Rieh . SiGe HBTs with cut-off frequency of 350 GHz. IEDM Tech. Dig. , 771 - 774
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      • A.F.W. Willoughby , J.M. Bonar , A.D.N. Paine . Diffusion mechanisms in SiGe alloys. Mater. Res. Soc. Symp. Proc. , 253 - 264
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