Demonstration of first 10 kV, 130 mΩ cm2 normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor

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Demonstration of first 10 kV, 130 mΩ cm2 normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor

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The first demonstration of a trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistor with a 120 µm, ∼4.9×1014 cm−3 doped drift layer is reported, resulting in a record high blocking voltage VB of 10 400 V and a specific on-resistance (RSP_ON) of 130 mΩ cm2, leading to the highest VB2/RSP_ON of 832 MW/cm2 reported to date for normally-off SiC FETs.

Inspec keywords: silicon compounds; power semiconductor switches; power field effect transistors; field effect transistor switches; junction gate field effect transistors; isolation technology; semiconductor doping; wide band gap semiconductors; ion implantation

Other keywords: SiC; current spreading effect; ICP etching; surface passivation; self-alignment processes; trenched-and-implanted field-effect transistor; vertical junction field-effect transistor; 10 kV; normally-off field-effect transistor; deep-trenched structures; high power switching; high blocking voltage; doped drift layer

Subjects: Power semiconductor devices; Semiconductor doping; Other field effect devices; Surface treatment (semiconductor technology)

References

    1. 1)
      • Zhao, J.H.: US, 6,107,649, .
    2. 2)
    3. 3)
      • J.H. Zhao , X. Li , K. Tone , P. Alexandrov , M. Pan , M. Weiner . A novel high-voltage normally-off 4H-SiC vertical JFET. Mater. Sci. Forum , 1223 - 1226
    4. 4)
      • Zhao, J.H., Xie, K., Lorenzo, G., Buchwald, W., Flemish, J., Burke, T., Singh, H.: `SiC UMOS and thyristor-based power switches', Proc. of the Workshop on High temperature power electronics for vehicle, 26–27 April 1995, p. 36–43.
    5. 5)
      • Asano, K., Sugawara, Y., Hayashi, T., Ryu, S., Singh, R., Palmour, J., Takayama, D.: `5 kV 4H-SiC SEJFET with low RonS of 69 mΩ cm', Proc. ISPSD, 2002, p. 61–64.
    6. 6)
      • X. Li , K. Tone , L. Cao , P. Alexandrov , L. Fursin , J. Zhao . Theoretical and experimental study of 4H-SiC junction edge termination. Mater. Sci. Forum , 1375 - 1378
    7. 7)
      • P. Friedrichs , H. Mitlehner , R. Schörner , K.-O. Dohnke , R. Elpelt , D. Stephani . Application-oriented unipolar switching SiC devices. Mater. Sci. Forum , 1185 - 1190
    8. 8)
      • H. Onose , A. Watanabe , T. Someya , Y. Kobayashi . 2 kV 4H-SiC junction FETs. Mater. Sci. Forum , 1227 - 1230
    9. 9)
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