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The first demonstration of a trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistor with a 120 µm, ∼4.9×1014 cm−3 doped drift layer is reported, resulting in a record high blocking voltage VB of 10 400 V and a specific on-resistance (RSP_ON) of 130 mΩ cm2, leading to the highest VB2/RSP_ON of 832 MW/cm2 reported to date for normally-off SiC FETs.
Inspec keywords: silicon compounds; power semiconductor switches; power field effect transistors; field effect transistor switches; junction gate field effect transistors; isolation technology; semiconductor doping; wide band gap semiconductors; ion implantation
Other keywords:
Subjects: Power semiconductor devices; Semiconductor doping; Other field effect devices; Surface treatment (semiconductor technology)