Tunable InGaAsP/InP DFB lasers at 1.3 µm integrated with Pt thin film heaters deposited by focused ion beam

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Tunable InGaAsP/InP DFB lasers at 1.3 µm integrated with Pt thin film heaters deposited by focused ion beam

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Data is presented on tunable singlemode operation from 1.3 µm InGaAsP/InP distributed feedback lasers, suitable for telecom and chemical sensing, integrated with Pt thin film heaters deposited by focused ion beam. The integrated laser shows a wavelength shift of 4.9 nm (or 857 GHz) with a very small heater current of 13 mA.

Inspec keywords: III-V semiconductors; distributed feedback lasers; focused ion beam technology; thin film devices; indium compounds; laser tuning; gallium arsenide; platinum; quantum well lasers; ion beam assisted deposition; integrated optics

Other keywords: small heater current; multiple quantum well active layer; distributed feedback lasers; 13 mA; tunable singlemode operation; integrated thin film heaters; InGaAsP-InP; focused ion beam deposited heater; 1.3 micron; emission spectra; three-step metal organic chemical vapour deposition; coated planar buried heterostructure

Subjects: Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning; Ion plating and other vapour deposition; Other thin film deposition techniques; Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning

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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20031186
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