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High-reliability InGaP/GaAs HBTs with 153 GHz fT and 170 GHz fmax

High-reliability InGaP/GaAs HBTs with 153 GHz fT and 170 GHz fmax

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High-reliability high-performance InGaP/GaAs hetero-junction bipolar transistors (HBTs) are described. A novel layer structure, ion implantation into the external collector region, and an emitter-surrounding ledge overlaid by base metal enhance both performance and reliability. High values of fT and fmax both greater than 150 GHz are attained with a long MTTF of 1011 h at a junction temperature of 125°C under severe bias conditions.

Inspec keywords: gallium arsenide; ion implantation; semiconductor device reliability; III-V semiconductors; indium compounds; UHF bipolar transistors; heterojunction bipolar transistors; S-parameters

Other keywords: severe bias conditions; high-performance; 170 GHz; emitter-surrounding ledge; ion implantation; 153 GHz; S-parameter; InGaP-GaAs; long MTTF; high-speed operation; transmission line model patterns; external collector region; layer structure; high-reliability; heterojunction bipolar transistors

Subjects: Solid-state microwave circuits and devices; Bipolar transistors

References

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      • P.M. Asbeck . GaAs/(Ga, Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers. IEEE Electron Device Lett. , 310 - 312
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      • Y. Matsuoka , S. Yamahata , S. Yamaguchi , K. Murato , E. Sano , T. Ishibashi . IC-oriented self-aligned high-performance AlGaAs/GaAs ballistic collectiontransistors and their applications to high-speed ICs. IEICE Trans. Electron. , 1 392 - 1401
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      • O. Nakajima . High-performance AlGaAs/GaAs HBT's utilizing proton-implanted buried layers and highly doped base layers. IEEE Trans. Electron Devices , 2393 - 2398
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