Synthesis and SAW characteristics of AlN thin films fabricated on Si and GaN using helicon sputtering system

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Synthesis and SAW characteristics of AlN thin films fabricated on Si and GaN using helicon sputtering system

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High quality AlN films have been obtained on SiO2/Si and GaN/Sapphire using the helicon sputtering method. Fabrication of the thin film layered structure surface acoustic wave (SAW) devices has been demonstrated and the promising characteristics are presented.

Inspec keywords: X-ray diffraction; III-V semiconductors; piezoelectric thin films; surface structure; atomic force microscopy; sputter deposition; sputtered coatings; wide band gap semiconductors; aluminium compounds; surface acoustic waves; frequency response; surface acoustic wave filters

Other keywords: high quality films; piezoelectric films; SAW filters; SAW characteristics; thin films; surface morphology; atomic force microscopy; sputtering synthesis; highly textured surface; helicon sputtering system; XRD patterns; layered structure devices; frequency response; AlN

Subjects: Sputter deposition; Piezoelectric and ferroelectric materials; Deposition by sputtering; Piezoelectricity and electrostriction; Dielectric thin films; Acoustic wave devices; Transduction; devices for the generation and reproduction of sound; Thin film growth, structure, and epitaxy

References

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      • K. Higaki . High frequency SAW filter on diamond. IEEE MTT-S Int. Microw. Symp. Dig. , 829 - 832
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      • Caliendo, C.: `Piezoelectric AlN film for SAW devices applications', Proc. IEEE Ultrasonics Symp., 1993, Baltimore, MD, USA, 1, p. 249–252.
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      • Nam, C.-W., Lee, K.-C.: `Structural properties and frequency response of AlN thin film surface acoustic wave device', Proc. 5th Russian–Korean Int. Symp. Science and Technology, 2001, KORUS'01, June–July 2001, 1, p. 206–209.
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