The effect of ion implantation induced defects on optical attenuation in silicon waveguides has been investigated for MeV self-ion implantation. A lower limit of 1200 dB cm−1 for a dose of 1×1014 cm−2 has been measured. The results can be approximated by a simple analytical expression and hence extended to a wider range of implantation species, doses and energies.
Inspec keywords: optical planar waveguides; ion implantation; vacancies (crystal); annealing; light absorption; optical fabrication; optical attenuators; silicon-on-insulator; ion beam effects
Other keywords:
Subjects: Annealing processes in semiconductor technology; Interstitials and vacancies; Optical waveguides; Doping and implantation of impurities; Semiconductor doping; Integrated optics; Ion beam effects; Optical fabrication, surface grinding; Integrated optics; Optical waveguides and couplers; Annealing processes
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