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Effect of ion implantation induced defects on optical attenuation in silicon waveguides

Effect of ion implantation induced defects on optical attenuation in silicon waveguides

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The effect of ion implantation induced defects on optical attenuation in silicon waveguides has been investigated for MeV self-ion implantation. A lower limit of 1200 dB cm−1 for a dose of 1×1014 cm−2 has been measured. The results can be approximated by a simple analytical expression and hence extended to a wider range of implantation species, doses and energies.

References

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      • Day, I.E.: `Solid state absorption attenuator in silicon-on-insulator with MHz bandwidth', Proc. National Fiber Optic Engineers Conf. (NFOEC), 2001, Baltimore, MD, USA, p. 943–953.
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