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Proposal and experimental demonstration of magnetic tunnel junction connected in parallel with tunnel diode

Proposal and experimental demonstration of magnetic tunnel junction connected in parallel with tunnel diode

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A novel magnetic random access memory cell consisting of a magneto-tunnel junction (MTJ) and tunnel diode connected in parallel is described. The negative differential resistance characteristics of the tunnel diode were used to increase the tunnelling magneto-resistance (TMR) ratio of the MTJ. The fabricated circuit showed that the TMR ratio was enhanced from its original value of 11 to 103%.

References

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