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32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs

32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs

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For the first time the fabrication of a distributed amplifier based on n-type Si/SiGe-MODFETs is presented. The realised amplifier consists of six identical stages and has a gain of 5.5 dB. The bandwidth of this amplifier is 32 GHz. The gain ripple up to this frequency is ±0.8 dB. The return losses at the input and output are better than 10 dB. Using a coplanar waveguide layout for the amplifier no via-holes and backside processing is needed. The MMIC has a size of 0.9×3.2 mm2.

References

    1. 1)
      • Kallfass, I., Zeuner, M., König, U., Schumacher, H., Brazil, T.J.: `A DC to 40 GHz large signal model for ', European Microwave Conference, 2002, Milano, Italy.
    2. 2)
      • T. Mack , T. Hackbarth , H.-J. Herzog , H. von Känel , M. Kummer , J. Ramm , R. Sauer . Si/SiGe FETs grown by MBE on LEPECVD grown virtual substrate. Mater. Sci. Eng. B , 368 - 372
    3. 3)
    4. 4)
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