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Enhancing circuit design flexibility with argon implanted polysilicon resistor

Enhancing circuit design flexibility with argon implanted polysilicon resistor

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  • Author(s): C.S. Lin 1 ; Y.K. Fang 1 ; S.F. Chen 1 ; C.Y. Lin 1 ; M.C. Hsieh 1 ; Y.-L. Hsu 2 ; S.-L. Hsu 2
    • View affiliations
    • Affiliations: 1: VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
      2: VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Taiwan Semiconductor Manufacturing Co. Ltd., Taiwan, Republic of China
  • Source: Volume 39, Issue 19, 18 September 2003, p. 1409 – 1411
    DOI:  10.1049/el:20030883 , Print ISSN 0013-5194, Online ISSN 1350-911X
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An argon implanted polysilicon thin-film resistor is proposed to raise the sheet resistance and preserve the original electrical characteristics of a resistor for high voltage CMOS technology applications. The experiment results indicate the resistance can be raised by almost two times in magnitude while the voltage coefficient of resistance (VCR) and temperature coefficient of resistance (TCR) are shifted by only 7% and 11% at maximum, respectively. The technology offers potential applications for enhancing flexible circuit design in high voltage CMOS technology.

Inspec keywords: power integrated circuits; elemental semiconductors; argon; integrated circuit design; ion implantation; CMOS integrated circuits; silicon; electric resistance; thin film resistors

Other keywords: Si:Ar; polysilicon thin-film resistor; sheet resistance; HV CMOS technology applications; temperature coefficient of resistance; Ar implanted polysilicon resistor; VCR; circuit design flexibility enhancement; voltage coefficient of resistance; high voltage CMOS; TCR

Subjects: Semiconductor integrated circuit design, layout, modelling and testing; Power integrated circuits; CMOS integrated circuits; Semiconductor doping

References

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      • S. Wolf , R.N. Tauber . (1990) Silicon processing for the VLSI era, Process technology.
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      • N.C.-C. Lu . Modeling and optimization of monolithic polycrystalline silicon resistors. IEEE Trans. Electron Devices , 7
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      • M. Nakabayashi , M. Ikegami , T. Daikoku . Influence of hydrogen on electrical characteristics of poly-Si resistor. Jpn. J. Appl. Phys. 1 , 3734 - 3738
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