Boron penetration from the gate electrode into the Si substrate presents a significant problem in advanced PMOS device fabrication. It is known that hydrogen enhances B diffusion in silicon dioxide. It is shown that hydrogen from decaborane gate electrode implants also enhances boron penetration leading to a degradation of PMOS transistor parameters.
References
-
-
1)
-
J.R. Pfiester ,
F.K. Baker ,
T.C. Mele ,
H.-H. Tseng ,
P.J. Tobin ,
J.D. Hayden ,
J.W. Miller ,
C.D. Gunderson ,
L.C. Parillo
.
The effects of boron penetration on p+ polysilicon gated PMOS devices.
IEEE Trans. Electron Devices
,
8 ,
1842 -
1851
-
2)
-
T. Aoyama ,
K. Suzuki ,
H. Tashiro ,
Y. Tada ,
Y. Kataoka ,
H. Arimoto ,
K. Horiuchi
.
Hydrogen-enhanced boron penetration in PMOS devices during SiO2 chemical vapor deposition.
Jpn. J. Appl. Phys.
,
2381 -
2384
-
3)
-
J.M. Sung ,
C.Y. Lu ,
M.L. Chen ,
S.J. Hillenius ,
W.S. Linderberger ,
L. Manchanda ,
T.E. Smith ,
S.J. Wang
.
Fluorine effect on boron diffusion of p+ gate devices.
IEDM Tech. Dig.
,
447 -
450
-
4)
-
K. Goto ,
J. Matsuo ,
K. Tada ,
T. Sugii ,
I. Yamada
.
Decaborane (B10H14) ion implantation technology for sub-0.1-µm PMOSFET's.
IEEE Trans. Electron Devices
,
4 ,
683 -
689
-
5)
-
R.B. Fair
.
Physical models of boron diffusion in ultrathin gate oxides.
J. Electrochem. Soc.
,
2 ,
708 -
717
-
6)
-
K.K. Bourdelle ,
H.-J.L. Gossmann ,
S. Chaudhry ,
A. Agarwal
.
The effect of fluorine from BF2 source/drain extension implants on performance of PMOS transistors with thin gate oxides.
IEEE Electron Device Lett.
,
6 ,
284 -
286
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