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Boron penetration through gate oxide from decaborane gate electrode implantation

Boron penetration through gate oxide from decaborane gate electrode implantation

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Boron penetration from the gate electrode into the Si substrate presents a significant problem in advanced PMOS device fabrication. It is known that hydrogen enhances B diffusion in silicon dioxide. It is shown that hydrogen from decaborane gate electrode implants also enhances boron penetration leading to a degradation of PMOS transistor parameters.

References

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      • J.M. Sung , C.Y. Lu , M.L. Chen , S.J. Hillenius , W.S. Linderberger , L. Manchanda , T.E. Smith , S.J. Wang . Fluorine effect on boron diffusion of p+ gate devices. IEDM Tech. Dig. , 447 - 450
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      • R.B. Fair . Physical models of boron diffusion in ultrathin gate oxides. J. Electrochem. Soc. , 2 , 708 - 717
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