Boron penetration through gate oxide from decaborane gate electrode implantation

Boron penetration through gate oxide from decaborane gate electrode implantation

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Boron penetration from the gate electrode into the Si substrate presents a significant problem in advanced PMOS device fabrication. It is known that hydrogen enhances B diffusion in silicon dioxide. It is shown that hydrogen from decaborane gate electrode implants also enhances boron penetration leading to a degradation of PMOS transistor parameters.


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