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Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm2/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths.
Inspec keywords: ion beam effects; carrier density; carrier lifetime; III-V semiconductors; photoconducting materials; indium compounds; carrier mobility; electrical resistivity; Hall effect; gallium arsenide
Other keywords:
Subjects: II-VI and III-V semiconductors; Photoconducting materials and properties; Ion beam effects; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electrical conductivity of II-VI and III-V semiconductors; Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Photoconduction and photovoltaic effects; photodielectric effects; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Radiation effects (semiconductor technology)