Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime

Access Full Text

Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm2/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths.

Inspec keywords: ion beam effects; carrier density; carrier lifetime; III-V semiconductors; photoconducting materials; indium compounds; carrier mobility; electrical resistivity; Hall effect; gallium arsenide

Other keywords: optical communication wavelength; InGaAs layer; defect concentration; 270 fs; ion irradiation; Hall effect; carrier mobility; InGaAs; ultrafast photoconductive device; subpicosecond carrier lifetime; 1.55 micron; residual carrier concentration; electrical resistivity

Subjects: II-VI and III-V semiconductors; Photoconducting materials and properties; Ion beam effects; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electrical conductivity of II-VI and III-V semiconductors; Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Photoconduction and photovoltaic effects; photodielectric effects; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Radiation effects (semiconductor technology)

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
      • H. Kunzel , J. Bottcher , R. Gibis , G. Urmann . Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy. Appl. Phys. Lett. , 1347 - 1349
    5. 5)
    6. 6)
      • P.Y. Han , X.G. Huang , X.-C. Zhang . Direct characterization of terahertz radiation from the dynamics of the semiconductor surface field. Appl. Phys. Lett. , 2864 - 2866
    7. 7)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20030441
Loading

Related content

content/journals/10.1049/el_20030441
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading