2.1 A/mm current density AlGaN/GaN HEMT

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2.1 A/mm current density AlGaN/GaN HEMT

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The electrical performances of high current density AlGaN/GaN HEMTs are reported. 2×75 µm×0.7 µm devices grown on sapphire substrate showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and VDS=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.

Inspec keywords: gallium compounds; semiconductor device measurement; microwave field effect transistors; III-V semiconductors; microwave power transistors; power HEMT; wide band gap semiconductors; current density; aluminium compounds

Other keywords: RF power measurements; sapphire substrate; microwave power capability; Al2O3; peak PAE; pulse condition; saturated output power; electrical performances; Al0.34Ga0.66N-GaN; 8 GHz; AlGaN/GaN HEMT; 200 ns; 2.1 A/mm current density; 15 V

Subjects: Other field effect devices; Power semiconductor devices; Solid-state microwave circuits and devices

References

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      • S. Heikman , S. Keller , S.P. DenBaars , U.K. Mishra . Growth of Fe-doped semi-insulating GaN by metalorganic chemical vapor deposition. Appl. Phys. Lett. , 439 - 441
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20030382
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