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The integration of InGaAs photodetectors embedded in a polymer interconnection waveguide on Si and ceramic electrical interconnection substrates has been demonstrated. The photodetector and substrate are independently fabricated and bonded, with subsequent waveguide integration. The embedding fabrication process, coupling, and bandwidth are reported at 1 Gbit/s.
Inspec keywords: indium compounds; gallium arsenide; photodetectors; optical couplers; III-V semiconductors; integrated circuit interconnections; optical interconnections; metal-semiconductor-metal structures
Other keywords:
Subjects: Metal-insulator-metal and metal-semiconductor-metal structures; Metallisation and interconnection technology