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Semi-insulating layers in 4H and 6H SiC by Si and C ion implantation

Semi-insulating layers in 4H and 6H SiC by Si and C ion implantation

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  • Author(s): J.C. White 1 ; G.L. Harris 1 ; D.B. Poker 2
    • View affiliations
    • Affiliations: 1: Materials Science Research Center of Excellence and Department of Electrical Engineering, Howard University, Washington, USA
      2: Materials Science Research Center of Excellence and Department of Electrical Engineering, Oak Ridge National Laboratory, Oak Ridge, USA
  • Source: Volume 38, Issue 24, 21 November 2002, p. 1597 – 1598
    DOI:  10.1049/el:20021045 , Print ISSN 0013-5194, Online ISSN 1350-911X
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Semi-insulating regions have been obtained in 6H and 4H silicon carbide using ion implantation. The silicon carbide samples were implanted with either carbon or silicon ions followed by isochronal heat treatments. This leads to compensation, which is achieved by the lattice damage and by the thermal redistribution of atoms.

Inspec keywords: electrical resistivity; annealing; ion beam effects; ion implantation; wide band gap semiconductors; silicon compounds

Other keywords: isochronal heat treatments; Si ion implantation; 600 to 1200 C; thermal atom redistribution; lattice damage; compensation; SiC; 6H SiC; 0.4 to 3.0 MeV; semi-insulating layers; C ion implantation; temperature dependent resistivity measurements; 4H SiC; 0.5 to 4.5 MeV; annealing temperature

Subjects: Ion beam effects; Semiconductor doping; Electrical conductivity of other crystalline inorganic semiconductors; Doping and implantation of impurities; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Other semiconductor materials; Annealing processes; Annealing processes in semiconductor technology

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