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Semi-insulating regions have been obtained in 6H and 4H silicon carbide using ion implantation. The silicon carbide samples were implanted with either carbon or silicon ions followed by isochronal heat treatments. This leads to compensation, which is achieved by the lattice damage and by the thermal redistribution of atoms.
Inspec keywords: electrical resistivity; annealing; ion beam effects; ion implantation; wide band gap semiconductors; silicon compounds
Other keywords:
Subjects: Ion beam effects; Semiconductor doping; Electrical conductivity of other crystalline inorganic semiconductors; Doping and implantation of impurities; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Other semiconductor materials; Annealing processes; Annealing processes in semiconductor technology