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Semi-insulating layers in 4H and 6H SiC by Si and C ion implantation

Semi-insulating layers in 4H and 6H SiC by Si and C ion implantation

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Semi-insulating regions have been obtained in 6H and 4H silicon carbide using ion implantation. The silicon carbide samples were implanted with either carbon or silicon ions followed by isochronal heat treatments. This leads to compensation, which is achieved by the lattice damage and by the thermal redistribution of atoms.

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