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High transconductance modulation-doped SiGe pMOSFETs by RPCVD

High transconductance modulation-doped SiGe pMOSFETs by RPCVD

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A modulation-doped SiGe pMOSFET with a high transconductance (Gm) has been successfully fabricated through well-controlled boron δ-doping by reduced pressure chemical vapour deposition (RPCVD). Compared to a Si-control pMOSFET, it shows 30% enhanced Gm up to 102 mS/mm for 0.3 µm gate length, which is even larger than the reported value of a molecular beam epitaxy grown SiGe pMOSFET with a similar device design.

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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20020970
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