High performance 1500 V 4H-SiC junction barrier Schottky diodes

High performance 1500 V 4H-SiC junction barrier Schottky diodes

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The design, fabrication and characterisation results are reported of junction barrier Schottky (JBS) diodes of 1500 V-9 A and 1000 V-50 A based on 10.5 µm 4H-SiC blocking layers doped to 6.4×1015 cm−3 and 1.3×1016 cm−3, respectively. The clear advantages of JBS diodes over conventional Schottky diodes can be achieved without extra fabrication penalty.


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