The electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler–Nordheim constant current stressing is also reported. An interface state density (1.22×1012 cm−2 eV−1) has been observed for the Ta2O5/ZnO interface.
Inspec keywords: interface states; tantalum compounds; wide band gap semiconductors; semiconductor-insulator boundaries; zinc compounds; electronic density of states; MIS structures
Other keywords:
Subjects: Electronic structure of crystalline semiconductor compounds and insulators; Metal-insulator-semiconductor structures; Electrical properties of metal-insulator-semiconductor structures; Electronic states (surfaces and interfaces)
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